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| CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7 0.7 0.7 0.7 ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. D G S CEB SERIES TO-263(DD-PAK) G G D S CEI SERIES TO-262(I2-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 VDS VGS ID IDM PD EAS IAS TJ,Tstg f TO-220F Units V V 450 30 10 40 125 1.0 450 10 -55 to 150 10 40 45 0.36 450 10 e e A A W W/ C mJ A C Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RJC RJA 1.0 62.5 Limit 2.8 65 Units C/W C/W 2002.September 4 - 50 http://www.cetsemi.com CEP10N4/CEB10N4 CEI10N4/CEF10N4 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b c Tc = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS g VSD VGS = 0V, IS = 10A VDS = 320V, ID = 10A, VGS = 10V VDD = 200V, ID = 10A, VGS = 10V, RGEN = 9.1 Test Condition VGS = 0V, ID = 250A VDS = 450V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250A VGS = 10V, ID = 6A VDS = 50V, ID = 6A 3 2 0.6 6 1400 330 120 14 27 50 24 48 4 15 10 2.0 75 125 100 60 65 Min 450 25 100 -100 100 500 -500 4 0.7 Typ Max Units V A 4 nA nA V S pF pF pF ns ns ns ns nC nC nC A V VDS = 25V, VGS = 0V, f = 1.0 MHz Drain-Source Diode Characteristics and Maximun Ratings Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300s, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.L =9.16mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25 C . e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.Full package IS(max) = 5.6A . 4 - 51 CEP10N4/CEB10N4 CEI10N4/CEF10N4 6 VGS=10,8,7,6V 5 4 3 2 20 25 C ID, Drain Current (A) ID, Drain Current (A) 16 12 -55 C 8 TJ=125 C 4 VGS=5V 1 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics 1800 1500 1200 900 600 Coss 300 Crss 0 0 5 10 15 20 25 Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) ID=6A VGS=10V C, Capacitance (pF) -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature VGS=0V 1 VTH, Normalized Gate-Source Threshold Voltage VDS=VGS ID=250A IS, Source-drain current (A) 25 50 75 100 125 150 10 10 0 10 -25 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current 4 - 52 CEP10N4/CEB10N4 CEI10N4/CEF10N4 VGS, Gate to Source Voltage (V) 15 V =320V DS ID=10A 10 2 ID, Drain Current (A) 12 4 RDS(ON)Limit 10 1 10s 100s 1ms 10ms DC 9 6 10 0 3 0 0 12 24 36 48 10 -1 TC=25 C TJ=150 C Single Pulse 10 0 10 1 10 2 10 3 Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area VDD t on V IN D VGS RGEN G 90% toff tr 90% RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% PULSE WIDTH Figure 9. Switching Test Circuit Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 0.02 0.01 Single Pulse PDM t1 t2 1. RcJC (t)=r (t) * RcJC 2. RcJC=See Datasheet 3. TJM-TC = P* RcJC (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 - 53 |
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